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Advance Technical Information
HiperFETTM Power MOSFET Q3-Class
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXFN80N50Q3
VDSS ID25
RDS(on) trr
= =
500V 63A 65m 250ns
miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 500 500 30 40 63 240 80 5 50 780 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 1.3/11.5 30 V V V V A A A J V/ns W C C C V~ V~ Nm/lb.in. Nm/lb.in. g Features International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 30V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 40A, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 500 3.5 6.5 V V Applications DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls
G = Gate S = Source
D S S G
D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.
200 nA 50 A 2 mA 65 m
(c) 2011 IXYS CORPORATION, All Rights Reserved
DS100303(03/11)
IXFN80N50Q3
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 40A Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 40A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 40A, Note 1 Characteristic Values Min. Typ. Max. 35 55 10 1260 115 0.15 30 20 43 15 200 77 90 S nF pF pF ns ns ns ns nC nC nC 0.16 C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 40A, -di/dt = 100A/s VR = 100V, VGS = 0V 1.8 15.6 Characteristic Values Min. Typ. Max. 80 320 1.4 A A V
250 ns C A
Note
1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXFN80N50Q3
Fig. 1. Output Characteristics @ T J = 25C
80 VGS = 10V 70 60 9V 160 140 120 180 VGS = 10V
Fig. 2. Extended Output Characteristics @ T J = 25C
ID - Amperes
ID - Amperes
50 40 30 20 10 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
100 80 60 40 20
9V
8V
8V
7V 0 0 5 10 15 20 25 30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
80 70 60 VGS = 10V 9V 3.4 3.0 2.6 2.2 1.8 1.4 1.0 0.6 6V 0 0 2 4 6 8 10 12 0.2 -50
Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature
VGS = 10V
R DS(on) - Normalized
ID - Amperes
50 40 30 20 10
8V
I D = 80A I D = 40A
7V
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current
3.0 2.8 2.6 VGS = 10V TJ = 125C
70
Fig. 6. Maximum Drain Current vs. Case Temperature
60
R DS(on) - Normalized
2.4
50
ID - Amperes
TJ = 25C 0 20 40 60 80 100 120 140 160 180
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8
40
30
20
10
0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXFN80N50Q3
Fig. 7. Input Admittance
120 100 TJ = - 40C 100 80 25C 60 125C
Fig. 8. Transconductance
ID - Amperes
TJ = 125C 25C - 40C
60
g f s - Siemens
8.0 8.5 9.0 9.5 10.0
80
40
40 20
20
0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
0 0 20 40 60 80 100 120
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
240 16 VDS = 250V 14 200 12 160 I D = 40A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
120
VGS - Volts
TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
10 8 6
80
4 40 2 0 0 0 40 80 120 160 200 240 280
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
100,000
1000
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit
f = 1 MHz
Capacitance - PicoFarads
Ciss 10,000
100 100s
ID - Amperes
1,000 Coss
10
100 Crss
1
TJ = 150C TC = 25C Single Pulse 1ms
10 0 5 10 15 20 25 30 35 40
0.1 10 100 1,000
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN80N50Q3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
0.3
aaaaa
0.1
Z(th)JC - C / W
0.01
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_80N50Q3(Q8)03-02-11-A

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